X and Ku band GaAs m.e.s.f.e.t.

27 January 1972

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 8 (2) , 35-37
https://doi.org/10.1049/el:19720027

Abstract

A GaAs Schottky-barrier f.e.t. (m.e.s.f.e.t.) with a 1 μm gate has been built, which is suitable for X band and Ku band applications. The unilateral power gain over the X band is above 9 dB and the noise figure is only 5 dB at 10 GHz.

Keywords

X-BAND
GAAS SCHOTTKY BARRIER
KU BAND
MESFET
NOISE FIGURE
UNILATERAL POWER GAIN