A low-loss high-speed switching device: The 2500-V 300-A static induction thyristor
- 1 April 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (4) , 507-515
- https://doi.org/10.1109/T-ED.1986.22520
Abstract
An anode-emitter shorted-type 2500-V 300-A buried-gate static induction (SI) thyristor was fabricated and resulted in a very-high-speed turn-on time of 2.0 µs and a turn-off time of 3.1 µs, both at 1000 A, and in very low-loss performance due to the reduction of the tailing current. The switching loss and the conduction loss of the high-power SI thyristor is for the first time evaluated in this paper. Snubber-circuitless operation is demonstrated for the first time for the high-power SI thyristor.Keywords
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