Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and Si substrates
- 10 December 1992
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 228-238
- https://doi.org/10.1117/12.138635
Abstract
Nominally identical multiple-quantum-well detectors have been fabricated on GaAs and Si substrates, and the performance of these detectors has been compared at a temperature of 77 K and a wavelength of 10.2 micrometers . The two different substrates yield practically identical absorption characteristics, but the detector on the GaAs substrate has an approximately 60% higher specific detectivity because of its higher photoconductive gain and lower dark-current density.Keywords
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