Shot noise in silicon Schottky barrier diodes
- 1 October 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 15 (10) , 761-769
- https://doi.org/10.1109/T-ED.1968.16512
Abstract
Noise measurements have been performed on forward and reverse-biased silicon Schottky barrier diodes. Measurements were performed in the frequency range of 100 Hz to 50 kHz. Apart from excess noise observed for some diodes in a portion of this frequency range, the noise for the diodes was found to be in excellent agreement with shot-noise theory. Some refinements of the shot-noise theory have been considered, but the difference between the refined and the simple theories was not resolvable in our measurements. A useful noise-measurement technique is described.Keywords
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