Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications
- 30 June 1999
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 3790, 13-23
- https://doi.org/10.1117/12.351249
Abstract
Heterostructures formed from III-V semiconductors with the 6.1 angstroms lattice spacing (InAs, GaSb, AlSb and related alloys) have attracted significant interest because of their potential to define a new `state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 angstroms-based devices which have the potential to revolutionize infrared optoelectronics and low-power, high- speed electronics.Keywords
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