Influence of composition fluctuations in Al(Ga)As barriers on the exciton localization in thin GaAs quantum wells
- 15 February 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 55 (8) , 5239-5242
- https://doi.org/10.1103/physrevb.55.5239
Abstract
The localization of excitons in thin GaAs/Al(Ga)As quantum wells has been investigated by micro- and time-resolved photoluminescence (PL) spectroscopy. A fine-structured line shape in micro-PL is found not only for exciton recombination in the GaAs well but also, very similarly, for the Al(Ga)As barrier luminescence. By means of time-resolved measurements we show that the observed barrier luminescence probes selectively a barrier region close to the top interface of the quantum well. Our results directly reveal the essential contribution of Al(Ga)As composition fluctuations to the excition localization in GaAs/Al(Ga)As quantum wells.Keywords
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