Vapor phase epitaxial liftoff of GaAs and silicon single crystal films
- 30 June 1999
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 58 (2) , 141-146
- https://doi.org/10.1016/s0927-0248(98)00194-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Surface-micromachining processes for electrostatic microactuator fabricationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Dry release for surface micromachining with HF vapor-phase etchingJournal of Microelectromechanical Systems, 1997
- Epitaxial lift-off GaAs solar cell from a reusable GaAs substrateMaterials Science and Engineering: B, 1997
- Etch rates for micromachining processingJournal of Microelectromechanical Systems, 1996
- Hydrofluoric Acid Etching of Silicon Dioxide Sacrificial Layers: II . ModelingJournal of the Electrochemical Society, 1994
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987