The Activation Energy of Phosphorus Donors in Silicon‐Rich Silicon–Germanium Alloys
- 1 July 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 118 (1) , 275-282
- https://doi.org/10.1002/pssb.2221180133
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The electronic structure of impurities and other point defects in semiconductorsReviews of Modern Physics, 1978
- Theory of localized states in semiconductors. II. The pseudo impurity theory application to shallow and deep donors in siliconPhysical Review B, 1974
- Theory of localized states in semiconductors. I. New results using an old methodPhysical Review B, 1974
- Electron Paramagnetic Resonance (EPR) of Phosphorus in Silicon‐Rich Silicon–Germanium AlloysPhysica Status Solidi (b), 1974
- Determination of the Deformation-Potential Constant of the Conduction Band of Silicon from the Piezospectroscopy of DonorsPhysical Review B, 1972
- Multivalley Effective-Mass Approximation for Donor States in Silicon. I. Shallow-Level Group-V ImpuritiesPhysical Review B, 1971
- Higher Donor Excited States for Prolate-Spheroid Conduction Bands: A Reevaluation of Silicon and GermaniumPhysical Review B, 1969
- Lattice Parameter and Density in Germanium-Silicon Alloys1The Journal of Physical Chemistry, 1964
- Effect of Alloying and Pressure on the Band Structure of Germanium and SiliconPhysical Review B, 1963
- The Continuum Theory of Lattice DefectsPublished by Elsevier ,1956