Mo- and Ti-silicided low-resistance shallow junctions formed using the ion implantation through metal technique

1 March 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (3) , 581-586
https://doi.org/10.1109/T-ED.1987.22966

Abstract

Mo-and Ti-silicided junctions were formed using the ITM technique, which consists of ion implantation through metal (ITM) to induce metal-Si interface mixing and subsequent thermal annealing. Double ion implantation, using nondopant ions (Si or Ar) implantation for the metal-Si interface mixing and dopant ion (As or B) implantation for doping, has resulted in ultrashallow ( ≤ 0.1-µm) p+-n or n+-p junctions with ∼30-Ω sheet resistance for Mo-silicided junctions and ∼5.5-Ω sheet resistance for Ti-silicided junctions. The leakage current levels for the Mo-silicided n+-p junctions (0.1-µm junction depth) and the Mo-silicided p+-n junction (0.16-µm junction depth) are comparable to that for unsilicided n+-p junction with greater junction depth ( ∼0.25 µm).

Keywords

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