Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype

• 1 July 1997
• journal article
• research article
• Published by Wiley in Physica Status Solidi (b)
• Vol. 202  (1) , 137-148
• https://doi.org/10.1002/1521-3951(199707)202:1<137::aid-pssb137>3.0.co;2-y

Abstract

Keywords

• CRYSTAL GROWTH
• FIRST ORDER
• ROOM TEMPERATURE
• ELECTRIC CONDUCTIVITY
• DISLOCATIONS