Measurement of photoemission oscillations during molecular beam epitaxial growth of (001) GaAs, AlAs, AlGaAs, InAs, and AlSb
- 19 June 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (25) , 3524-3526
- https://doi.org/10.1063/1.113785
Abstract
Photoemission oscillations are observed from (001) GaAs, AlAs, AlGaAs, InAs, and AlSb. The periodicity of the oscillations corresponds to that of reflection high-energy electron diffraction oscillations measured using the same growth conditions. For both methods, the oscillation amplitude is strongly dependent on the substrate temperature, III/V flux ratio, and the nature of the surface on which growth is nucleated for the oscillation measurement.Keywords
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