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InAs/Ga1−
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In
x
Sb strained-layer superlattices grown by molecular-beam epitaxy
Home
Publications
InAs/Ga1−
x
In
x
Sb strained-layer superlattices grown by molecular-beam epitaxy
InAs/Ga1−
x
In
x
Sb strained-layer superlattices grown by molecular-beam epitaxy
DC
D. H. Chow
D. H. Chow
RM
R. H. Miles
R. H. Miles
JS
J. R. Söderström
J. R. Söderström
TM
T. C. McGill
T. C. McGill
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1 July 1990
journal article
Published by
American Vacuum Society
in
Journal of Vacuum Science & Technology B
Vol. 8
(4)
,
710-714
https://doi.org/10.1116/1.584985
Abstract
No abstract available
Keywords
MOLECULAR BEAM EPITAXY
SUPERLATTICES
Cited
Cited by 27 articles
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