High performance all-sputter deposited Cu2S/CdS junctions

Publisher Website
Google Scholar
Abstract
Thin‐film Cu2S/CdS solar cells have been fabricated in a multisource chamber by using magnetron reactive sputtering to deposit the Cu2S and CdS layers. An analysis of junction current voltage, log Jsc vs Voc (where Jsc is the short circuit current and Voc is the open circuit voltage) and capacitance versus voltage measurements indicates that the junctions have very good quality, with diode ideality factors of near unity, and interface recombination velocities of about 2×105 cm/s. Cells without antireflection coatings have yielded Jsc = 12.2 mA/cm2, Voc = 0.53 V, fill factors of 0.62, and efficiencies of ∼4% in their as‐deposited state. The cells show that Cu2S/CdS junctions equivalent to those formed by the topotaxial ion exchange method can be formed by sequential all‐vacuum deposition of CdS and Cu2S, and that magnetron sputtering does not cause damage that compromises their electrical performance.