Room-temperature CW operation of MBE-grown GaInAs/AlInAs mow lasers in 1.5 μ m range

19 November 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (24) , 1271-1273
https://doi.org/10.1049/el:19870882

Abstract

We report the first successful room-temperature CW operation of GaInAs/AlInAs multiquantum-well (MQW) injection lasers fabricated by molecular beam epitaxy (MBE). The emitting wavelength and threshold current were 1.57 μm and 530 mA, respectively, for an SiN-defined stripe laser with a 12 μm-wide, 600 μm-long cavity.

Keywords

MOLECULAR BEAM EPITAXY
CAVITY
530 MA
SIN FILM
MBE
EMITTING WAVELENGTH
12 MICRON
THRESHOLD CURRENT
GAINAS-ALINAS LASERS
ROOM-TEMPERATURE CW OPERATION
600 MICRON
1.57 MICRON
SIN-DEFINED STRIPE LASER
MQW LASERS
MULTIQUANTUM-WELL
INJECTION LASERS