High-performance polycrystalline silicon thin-film transistor technology using low-temperature metal-induced unilateral crystallization
- 30 April 2004
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 35 (4) , 337-341
- https://doi.org/10.1016/s0026-2692(03)00241-6
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Application of re‐crystallized metal‐induced unilaterally crystallized polycrystalline‐silicon thin‐film‐transistor technology to reflective liquid‐crystaldisplayJournal of the Society for Information Display, 2001
- High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applicationsIEEE Transactions on Electron Devices, 2000