Nucleation in Si(001) Homoepitaxial Growth
- 8 April 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 76 (15) , 2770-2773
- https://doi.org/10.1103/physrevlett.76.2770
Abstract
From low energy electron microscopy observations of the surface topography of Si(001) during homoepitaxial growth at 650 °C, we have determined the nucleation density profile on top of a “base” island, and the distribution of the base island radius at the time of nucleation. Comparison with homogeneous nucleation theory yields a typical critical nucleus size of dimers, and allows nucleation on Si(001) to be understood in a common framework with equilibrium step-edge fluctuations and 2D island ripening.
This publication has 8 references indexed in Scilit:
- Chemical Potential Maps and Spatial Correlations in 2D-Island Ripening on Si(001)Physical Review Letters, 1995
- Surface self-diffusion on Si from the evolution of periodic atomic step arraysJournal of Physics and Chemistry of Solids, 1994
- Step Capillary Waves and Equilibrium Island Shapes on Si(001)Physical Review Letters, 1994
- Critical island size for layer-by-layer growthPhysical Review Letters, 1994
- The equilibration of terrace width distributions on stepped surfacesSurface Science, 1992
- Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy studyPhysical Review Letters, 1991
- Low Energy Electron MicroscopyMRS Proceedings, 1991
- An analytical reflection and emission UHV surface electron microscopeUltramicroscopy, 1985