Peculiarities of Current‐Voltage Characteristics along 〈110〉 in n‐Si
- 1 May 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 93 (1) , K89-K92
- https://doi.org/10.1002/pssb.2220930173
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Ionization of low donor levels and recombination of hot electrons in n‐Si at low temperaturesPhysica Status Solidi (b), 1979
- Static high field domains in n-SiPhysica Status Solidi (a), 1978
- Electron drift velocity in siliconPhysical Review B, 1975
- Influence of Uniaxial Pressure on Hot-Electron Conductivity in n-Si at Low TemperaturesPhysica Status Solidi (b), 1974
- Measurement of bulk negative differential conductivity in n-type siliconPhysics Letters A, 1972
- Conductivity of Hot Electrons in n-Si at Liquid Neon TemperaturePhysica Status Solidi (b), 1971