The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition

This publication has 120 references indexed in Scilit:

• Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method
  Journal of Applied Physics, 1989
• Plasma enhanced chemical vapour deposition silicon nitride for microelectronic applications
  Thin Solid Films, 1988
• Memory characteristics of MNOS capacitors fabricated with PECVD silicon nitride
  Solid-State Electronics, 1988
• Nitrogen activation for plasma chemical synthesis of thin Si3N4 films
  Thin Solid Films, 1983
• Reduced lateral diffusion and reverse leakage in Be-implanted GaAs1−xPxdiodes
  Solid-State Electronics, 1977
• Optical properties, band gap, and surface roughness of Si3N4
  Physica Status Solidi (a), 1977
• The determination of the energy distribution of interface traps in metal-nitride-oxide-silicon (memory) devices using non-steady-state techniques
  Solid-State Electronics, 1976
• Electrical and optical properties of AgInS2
  Solid-State Electronics, 1976
• Tunneling in MIS structures—I: Theory
  Solid-State Electronics, 1967
• Tunneling in metal-oxide-silicon structures
  Solid-State Electronics, 1967