Optical investigation of biexcitons and bound excitons in GaAs quantum wells

Publisher Website
Google Scholar
Abstract
The photoluminescence spectra from a number of high-quality GaAs single-quantum-well samples grown by molecular-beam epitaxy reveal a doublet emission having an energy separation of ∼1.25 meV. A similar doublet was observed in a sample for which the interrupted growth technique was used. Using excitation-intensity-dependent luminescence and time-resolved spectroscopy, we will show that the lower-energy components of these doublets have different origins in different samples and can be attributed either to biexcitons or to impurity-bound excitons.