The Application of Some Direct Current Properties of Silicon Junction Detectors to $\gamma$-ray Dosimetry

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Abstract
The properties of irradiated silicon PN junctions are discussed in terms of the reverse bias applied to them. At lower exposure rates the bias should be reduced or removed because the leakage current falls with bias more rapidly than does the radiation induced current. When the bias is removed, the current obtainable from a shunted PN junction is proportional to exposure rate. The open circuit voltage is proportional to the logarithm of the exposure rate over a range of exposure rates. Measurements were made on PN junctions constructed for nuclear particle detectors and on solar cells as well as lithium drifted PIN junctions. The properties of the different kind of detectors are compared and their application to medicine and biology discussed.

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