Low threshold current laser emitting at 637 nm
- 25 April 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (9) , 693-695
- https://doi.org/10.1049/el:19910432
Abstract
Visible laser diodes operating at 637 nm have been fabricated with tensile strained GaInP multiple quantum well active regions. The threshold current of these lasers are as low as 1.2kA/cm2. The output from the strained active region is TM polarised.Keywords
This publication has 1 reference indexed in Scilit:
- Chapter 8 Principles and Applications of Semiconductor Strained-Layer SuperlatticesPublished by Elsevier ,1987