X-band GaAs MESFET oscillator for cryogenic application at 4.2 K

21 November 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (24) , 2210-2211
https://doi.org/10.1049/el:19911367

Abstract

A stripline X-band oscillator for use in a Josephson potentiometer has been designed and constructed. An oscillator comprising a packaged GaAs MESFET was successfully tested at temperatures of 300 and 4.2 K. The cooling improves the short term stability of the frequency during a period of several minutes by a factor of 10 to 10⁻⁶.

Keywords

PACKAGED GAAS MESFET
300 K
FREQUENCY STABILITY
GAAS MESFET OSCILLATOR
SEMICONDUCTORS
TEMPERATURES
SUPERCONDUCTING MMIC
STRIPLINE X-BAND OSCILLATOR
SHORT TERM STABILITY
SHF
CRYOGENIC APPLICATION
GAAS
4.2 K
JOSEPHSON POTENTIOMETER

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