Broadening of the Si doping layer in planar-doped GaAs in the limit of high concentrations
- 30 June 1991
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 78 (9) , 793-796
- https://doi.org/10.1016/0038-1098(91)90622-3
Abstract
No abstract availableKeywords
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