SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors
- 29 April 2010
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 645-648, 1101-1106
- https://doi.org/10.4028/www.scientific.net/msf.645-648.1101
Abstract
Switching devices based on wide band gap materials as SiC oer a signicant perfor- mance improvement on the switch level compared to Si devices. A well known example are SiC diodes employed e.g. in PFC converters. In this paper, the impact on the system level perfor- mance, i.e. eciency/power density, of a PFC and of a DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems. There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.Keywords
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