Temperature dependence of GaAs/AlGaAs multiquantum barrier lasers
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (12) , 1322-1324
- https://doi.org/10.1109/68.180563
Abstract
A GaAs/AlGaAs laser loaded by a multiquantum barrier (MQB) is reported, and its temperature-threshold characteristic has been systematically examined. It has been found that this characteristic is improved by introducing the MQB, and this improvement is reflected in the barrier height. The actual barrier heights of a MQB-loaded structure under biased conditions are also discussed, considering the Fermi level in the MQB region.<>Keywords
This publication has 13 references indexed in Scilit:
- Electron-wave reflection by multi-quantum barrier in n-GaAs/i-AlGaAs/ n-GaAs tunneling diodeApplied Physics Letters, 1991
- Modified multiquantum barrier for 600 nm range AlGaInP lasersElectronics Letters, 1991
- Design and photoluminescence study on a multiquantum barrierIEEE Journal of Quantum Electronics, 1991
- Short-wavelength InGaAlP visible laser diodesIEEE Journal of Quantum Electronics, 1991
- Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasersApplied Physics Letters, 1991
- The Temperature Dependence of the Threshold Current for InGaAlP Visible Light LasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Donor Levels in Si-Doped AlGaAs Grown by MBEJapanese Journal of Applied Physics, 1984
- The influence of bulk nonradiative recombination in the wide band-gap regions of molecular beam epitaxially grown GaAs-AlxGa1−xAs DH lasersApplied Physics Letters, 1978
- Room-temperature threshold-current dependence of GaAs-AlxGa1−xAs double-heterostructure lasers on x and active-layer thicknessJournal of Applied Physics, 1978
- Low-threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experimentJournal of Applied Physics, 1976