A novel cadmium free buffer layer for Cu(In,Ga)Se/sub 2/ based solar cells
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 91-94
- https://doi.org/10.1109/wcpec.1994.519815
Abstract
Solar cells based on Cu(In,Ga)Se/sub 2/ were prepared replacing the 'standard buffer layer' CdS with a In/sub x/(OH,S)/sub y/ thin film. The film is deposited in a chemical bath (CBD) process using an aqueous solution containing InCl/sub 3/ and thioacetamide. X-ray photoemission spectroscopy measurements were performed in order to characterize the growth kinetics and the chemical composition. The influence of different concentrations of InCl/sub 3/ and thioacetamide in the solution on the electrical properties of the solar cells was studied by measuring the j-V characteristics and the spectral quantum efficiencies. Capacitance-voltage (C-V) measurements indicate that the high V/sub oc/ values of devices with the novel buffer layer are correlated with narrower space charge widths and higher effective carrier concentrations in the absorber materials. The achieved conversion efficiency of approximately 15% using the cadmium free In/sub x/(OH,S)/sub y/ buffer demonstrates the potential of this process as an alternative to the standard chemical bath deposition of CdS.Keywords
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