Electrical probing of surface and bulk traps in proton-irradiated gate-assisted lateral PNP transistors
- 1 December 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 45 (6) , 2361-2365
- https://doi.org/10.1109/23.736455
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Radiation-induced gain degradation in lateral PNP BJTs with lightly and heavily doped emittersIEEE Transactions on Nuclear Science, 1997
- Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistorIEEE Transactions on Nuclear Science, 1996
- Gate-assisted lateral PNP active load for analog SiGe HBT technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- An improved analytical model for collector currents in lateral bipolar transistorsIEEE Transactions on Electron Devices, 1994