Characterization of thin-film silicon formed by high-speed zone-melting recrystallization process
- 30 November 1997
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 48 (1-4) , 261-267
- https://doi.org/10.1016/s0927-0248(97)00109-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Thin-Film Polycrystalline Si Solar Cell on Glass Substrate Fabricated by a Novel Low Temperature ProcessJapanese Journal of Applied Physics, 1994
- High-efficient operation of large-area (100 cm2) thin film polycrystalline silicon solar cell based on SOI structureSolar Energy Materials and Solar Cells, 1994
- Sub-5 µm Thin Film Crystalline Silicon Solar Cell on Alumina Ceramic SubstrateJapanese Journal of Applied Physics, 1993