Bond Strength of Bonded SOI Wafers
- 1 April 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (4R)
- https://doi.org/10.1143/jjap.31.975
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Silicon Wafer Bonding Mechanism for Silicon-on-Insulator StructuresJapanese Journal of Applied Physics, 1990
- Increased drain saturation current in ultra-thin silicon-on-insulator (SOI) MOS transistorsIEEE Electron Device Letters, 1988
- Reduction of kink effect in thin-film SOI MOSFETsIEEE Electron Device Letters, 1988
- Silicon-to-silicon direct bonding methodJournal of Applied Physics, 1986
- Subthreshold slope of thin-film SOI MOSFET'sIEEE Electron Device Letters, 1986