Free-Carrier Voigt Effect in Semiconductors
- 1 September 1961
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 123 (5) , 1631-1633
- https://doi.org/10.1103/physrev.123.1631
Abstract
Measurements of the Voigt and the Faraday effects have been made on samples of -type InAs and InSb. The Voigt and Faraday data are used together to obtain values of both the effective mass and concentration of free carriers which are consistent with values given by other methods. An experimental technique for measurement of small phase shifts in the Voigt effect is described.
Keywords
This publication has 5 references indexed in Scilit:
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- Voigt Effect in SemiconductorsPhysical Review Letters, 1960
- The energy-dependence of electron mass in indium antimonide determined from measurements of the infrared Faraday effectJournal of Physics and Chemistry of Solids, 1959
- The Faraday effect in semiconductorsJournal of Physics and Chemistry of Solids, 1959
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957