Room temperature continuous wave operation of GaInP/AlInP visible-light laser with GaInP/AlInP superlattice confinement layer grown by gas source molecular beam epitaxy

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Abstract
A remarkable threshold current density reduction (from 3.5kA/cm2 to 1.6kA/cm2) of GaInP/AlInP visible light lasers grown by gas source molecular beam epitaxy (GSMBE) was obtained by introducing 50 pairs of GaInP(7.1 Å)/AlInP(7.1 Å) short period superlattice confinement (SLC) layers. As a result, the room temperature continuous wave (CW) operation was obtained at 669 nm with a minimum threshold current of 50 mA and maximum light output of 10.5 mW.