Influence of Doping on the Crystal Potential of Silicon investigated by the Convergent Beam Electron Diffraction Technique
Open Access
- 1 September 1980
- journal article
- Published by Walter de Gruyter GmbH in Zeitschrift für Naturforschung A
- Vol. 35 (9) , 973-984
- https://doi.org/10.1515/zna-1980-0913
Abstract
Low index structure potentials of silicon were determined by convergent beam electron diffraction (Kossel-Möllenstedt technique) from very small crystal areas of about 100 Å in diameter. The values of 111, 222, 220, 113 and 004, determined to an accuracy of ±0.03 volts, are in excellent agreement with the accurate X-ray results of Aldred and Hart (see [6], p. 239). Heavy arsenic or phosphorous doping was found to cause a shift of 0.15 volts in the 111 structure potential. Absorption potentials were also determined and found to be 1/3 of the theoretical values published by Radi [20].Keywords
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