Spectrum and binding of an off-center donor in a spherical quantum dot
- 15 August 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (7) , 4497-4502
- https://doi.org/10.1103/physrevb.50.4497
Abstract
The energy levels and binding energies of an off-center donor in a GaAs- As spherical quantum dot are calculated by a linear variational method. The results clearly show the quantum size effect. The location effects of a donor ion on splitting, level ordering, and binding of the donor states are studied. It is found that the alteration of the position of a single Coulomb center can largely change the single-electron spectrum in a quantum dot with a larger radius.
Keywords
This publication has 16 references indexed in Scilit:
- Incomplete confinement of electrons and holes in microcrystalsPhysical Review B, 1990
- Confined electron and hydrogenic donor states in a spherical quantum dot of GaAs-AsPhysical Review B, 1990
- Exact solutions for hydrogenic donor states in a spherically rectangular quantum wellPhysical Review B, 1989
- Excitons in quantum boxes: Correlation effects and quantum confinementPhysical Review B, 1988
- Bound impurity in GaAs-As quantum-well wiresPhysical Review B, 1988
- Hydrogen impurities in quantum well wiresJournal of Applied Physics, 1986
- Shallow-impurity states in semiconductor quantum-well structuresPhysical Review B, 1985
- Hydrogenic-impurity ground state inmultiple—quantum-well structuresPhysical Review B, 1983
- Far infrared impurity absorption in a quantum wellSolid State Communications, 1983
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981