A multiple technique UHV chamber for the investigation of epitaxially grown semiconductor surfaces
- 1 November 1976
- journal article
- Published by IOP Publishing in Journal of Physics E: Scientific Instruments
- Vol. 9 (11) , 924-925
- https://doi.org/10.1088/0022-3735/9/11/007
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Iodine etching of the GaAs(111)As surface studied by LEED, AES, and mass spectroscopySurface Science, 1976
- Photoemission and energy loss spectroscopy on semiconductor surfacesSurface Science, 1975
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface StructuresJournal of Applied Physics, 1970