Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film Capacitors
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Ferroelectric materials for 64 Mb and 256 Mb DRAMsIEEE Circuits and Devices Magazine, 1990
- Activation field, fatigue, and waiting-time effects in KNO3 thin-film memoriesJournal of Applied Physics, 1987
- Analysis of electrical switching in sub-micron KNO3thin filmsFerroelectrics Letters Section, 1986