A Study of Inclusions in Indium Phosphide

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Abstract
A detailed examination of unusual inclusions in substrates has been undertaken. Techniques employed have included optical microscopy, scanning electron microscopy, reflection and transmission x‐ray topography, conventional and high voltage electron microscopy, electron diffraction, energy dispersive x‐ray analysis, and Auger emission spectroscopy. Inclusions have been detected in many, but not all, undoped, Fe‐, Sn‐, and Ge‐doped ingots, at densities from ∼103 to 104 cm−2. Larger inclusions consist essentially of a central core of densely tangled dislocations, surrounded by dislocation loops predominantly on {110} planes and extending 10–20 μm outwards from the core. The entire complex of core plus surrounding loops results in a characteristically pitted appearance after etching, or as a region of strong contrast by x‐ray topography. Smaller inclusions (∼1 μm size) have been examined in electron microscope specimens foils. Some inclusions have been found at line dislocations, and it is probable that this is where the majority of inclusions originate, by a nucleation process. Attempts to determine the structure and chemical composition of the inclusions are presented and discussed.

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