Excited-state absorption in the infrared emission domain of Nd3+-doped Y3Al5O12, YLiF4, and LaMgAl11O19

15 June 1993

journal article
Published by AIP Publishing in Journal of Applied Physics

Vol. 73 (12) , 8526-8530
https://doi.org/10.1063/1.353381

Abstract

Detailed excited‐state excitation spectra are recorded in the infrared emission domains around 1.06 and 1.32 μm of the Nd³⁺‐doped Y₃Al₅O₁₂, YLiF₄, and LaMgAl₁₁O₁₉ laser crystals. The positions of the observed lines are compared with that deduced from the energy levels of the Nd³⁺ ion in these materials.

This publication has 19 references indexed in Scilit:

Performance of various diode-pumped Nd:laser materials: influence of inhomogeneous broadening
IEEE Journal of Quantum Electronics, 1992
Continuous wave thin plate Nd:glass laser
IEEE Journal of Quantum Electronics, 1990
Nd:YAG quantum efficiency and related radiative properties
IEEE Journal of Quantum Electronics, 1989
Excited state absorption of pump radiation as a loss mechanism in solid-state lasers
IEEE Journal of Quantum Electronics, 1989
End-pumped Nd:LaF/sub 3/ and Nd:LaMgAl/sub 11/O/sub 19/ lasers
IEEE Journal of Quantum Electronics, 1989
Modeling of longitudinally pumped solid-state lasers exhibiting reabsorption losses
Journal of the Optical Society of America B, 1988
Diode laser-pumped solid-state lasers
IEEE Journal of Quantum Electronics, 1988
Diode pumping of LNA lasers for helium optical pumping
Optics Communications, 1987
LNA: A new CW Nd laser tunable around 1.05 and 1.08 µm
IEEE Journal of Quantum Electronics, 1986
Evidence of Nd:YAG quantum efficiency dependence on nonequivalent crystal field effects
Optics Communications, 1983