Improved resolution SIMS analysis of annealed Pt/Zn/Pt/ZrB2/Au ohmic contacts to p-InGaAs on InP substrates using back-surface profiling
- 1 December 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 52 (4) , 289-294
- https://doi.org/10.1016/0169-4332(91)90070-z
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Ge redistribution in solid-phase Ge/Pd/GaAs ohmic contact formationJournal of Applied Physics, 1990
- A High Depth Resolution Backside Secondary Ion Mass Spectrometry Technique Used for Studying Metal/Gaas ContactsMRS Proceedings, 1988
- Metal penetration and dopant redistribution beneath alloyed Ohmic contacts to n-GaAsJournal of Vacuum Science & Technology A, 1987