Low current 1-D model for SOI structures—Numerical analysis by a fixed function integration method (fixfun)
- 31 July 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (7) , 567-576
- https://doi.org/10.1016/0038-1101(89)90114-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Two-dimensional numerical analysis of the floating region in SOI MOSFETsIEEE Transactions on Electron Devices, 1988
- A new analytical model for the two-terminal MOS capacitor on SOI substrateIEEE Electron Device Letters, 1988
- Subthreshold slope of thin-film SOI MOSFET'sIEEE Electron Device Letters, 1986
- On Selection of Equidistributing Meshes for Two-Point Boundary-Value ProblemsSIAM Journal on Numerical Analysis, 1979