Small signal and power measurements of AlGaN/GaNHEMTwith SiN passivation
- 18 January 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (2) , 130-131
- https://doi.org/10.1049/el:20010100
Abstract
Small signal S-parameters and loadpull measurements are reported for AlGaN/GaN HEMT devices with 200 nm SiN passivation. The maximum output power increases from 0.59 W/mm to 1.45 W/mm and the efficiency is also enhanced from 16 to 27% for 2×50 µm HEMT devices after SiN passivation. Small signal equivalent circuit parameters including parasitic and intrinsic ones have been extracted from the measured S-parameters and are used to explain the effect of SiN on the power characteristics.Keywords
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