Atomic forces from electronic energies via the Hellmann-Feynman theorem, with application to semiconductor (110) surface relaxation
- 15 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (10) , 7164-7171
- https://doi.org/10.1103/physrevb.33.7164
Abstract
A method has been devised for computer simulations of covalently bonded systems, such as semiconductors. The method uses noncentral and nonlocal effective potentials generated from the electronic structure via the Hellmann-Feynman theorem. As an elementary example, the method is applied to the time-dependent relaxation of the (110) surfaces of various III-V and II-VI compound semiconductors, starting from an ‘‘ideal’’ unrelaxed surface. DOI: http://dx.doi.org/10.1103/PhysRevB.33.7164 © 1986 The American Physical SocietyKeywords
This publication has 24 references indexed in Scilit:
- New Molecular-Dynamics Method for Metallic SystemsPhysical Review Letters, 1985
- Computer simulations of surfaces, interfaces, and physisorbed filmsJournal of Vacuum Science & Technology B, 1984
- Elastic-Constant Anomalies in Metallic Superlattices: A Molecular-Dynamics StudyPhysical Review Letters, 1983
- The dynamics of adsorption, desorption and surface diffusionSurface Science, 1983
- Molecular dynamics simulations at constant pressure and/or temperatureThe Journal of Chemical Physics, 1980
- Tight‐binding calculations of the valence bands of diamond and zincblende crystalsPhysica Status Solidi (b), 1975
- Improved simulation of liquid water by molecular dynamicsThe Journal of Chemical Physics, 1974
- Calculation of Dynamical Surface Properties of Noble-Gas Crystals. II. Molecular DynamicsPhysical Review B, 1969
- Correlations in the Motion of Atoms in Liquid ArgonPhysical Review B, 1964
- Studies in Molecular Dynamics. I. General MethodThe Journal of Chemical Physics, 1959