Processing of InP MIS devices monitored via photoluminescence measurements

15 March 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (6) , 255-256
https://doi.org/10.1049/el:19840171

Abstract

A remarkable one-to-one correlation is observed between photoluminescence (PL) intensity and surface state density in the upper part of the gap of n-type InP. Measurement of the PL intensity is shown to be a simple and efficient method for monitoring each individual technological step of fabrication of MIS devices on InP.

Keywords

SURFACE STATE DENSITY
MIS DEVICES
PRODUCTION MONITORING
FABRICATION
MISFET
PHOTOLUMINESCENCE MEASUREMENTS
III-V SEMICONDUCTOR
INP MIS DEVICES
N-TYPE INP

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