Fabrication of InGaAs/InP avalanche photodiodes by reactive ion etching using CH4/H2 gases
- 1 May 1995
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 13 (3) , 974-977
- https://doi.org/10.1116/1.588215
Abstract
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