New method of characterizing majority and minority carriers in semiconductors
- 7 December 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (23) , 1916-1918
- https://doi.org/10.1063/1.98299
Abstract
A novel characterization method using magnetoconductivity tensor components to determine the carrier concentration and mobility of majority and minority carriers is presented. Results are given for bulk n-HgCdTe (one carrier), liquid phase epitaxial n-HgCdTe (two carriers), and p-InSb (two or three carriers). Advantages of this method over the standard Hall coefficient analysis are discussed.Keywords
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