Impact ionisation in high-output-conductance region of 0.5 μm AlSb/InAs HEMTs

14 October 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (21) , 1888-1890
https://doi.org/10.1049/el:19931257

Abstract

DC and RF measurements on AlSb/InAs HEMTs biased in the commonly observed high output conductance region are reported. In this region, high gate current, inductive output impedance and increased noise were observed resulting from impact ionisation. Devices with a 0.5 μm gate length exhibited a maximum f_Y and f_max of 25 and 40GHz, respectively.

Keywords

INDUCTIVE OUTPUT IMPEDANCE
25 GHZ
HIGH GATE CURRENT
ALSB-INAS
RF MEASUREMENTS
DC MEASUREMENTS
0.5 MICRON
IMPACT IONISATION
40 GHZ
NOISE
HEMTS
HIGH-OUTPUT-CONDUCTANCE REGION

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