All‐additive ink‐jet‐printed display backplanes: Materials development and integration

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Abstract
Abstract— Methods used to deposit and integrate solution‐processed materials to fabricate TFT backplanes by ink‐jet printing are discussed. Thematerials studied allow the development of an all‐additive process in which materials are deposited only where their functionality is required. The metal layer and semiconductor are printed, and the solution‐processed dielectric is spin‐coated. Silver nanoparticles are used as gate and datametals, the semiconductor used is a polythiophene derivative (PQT‐12), and the gate dielectric is an epoxy‐based photopolymer. The maximum processing temperature used is 150°C, making the process compatible with flexible substrates. The ION/IOFF ratio was found to be about 105−106, and TFT mobilities of 0.04 cm2/V‐sec were obtained. The influence of surface treatments on the size and shape of printed features is presented. It is shown that coffee‐stain effects can be controlled with ink formulation and that devices show the expected pixel response.