Computer simulation of boundary condition for Schottky barrier diodes
- 3 August 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (16) , 1098-1100
- https://doi.org/10.1049/el:19890735
Abstract
A computer simulation of a GaAs Schottky barrier diode has been carried out, using a combination of a drift-diffusion equation solver and a Monte Carlo program. In contrast to previous similar reports, we have found that a variable boundary condition is required, at least when the opposing barrier allows a Monte Carlo simulation to be accurately utilised.Keywords
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