III-V semiconductor device dry etching using ECR discharges
- 1 March 1992
- journal article
- Published by IOP Publishing in Plasma Sources Science and Technology
- Vol. 1 (1) , 18-27
- https://doi.org/10.1088/0963-0252/1/1/004
Abstract
Electron cyclotron resonance (ECR) discharges are characterized by high ion densities (12 cm-3) at low pressure ( approximately 1 mTorr) and by low ion energies (4/H2 plasmas and GaAs-based devices in CCl2F2 or PCl3 plasmas. The systematics of damage introduction into HEMTs and HBTs using these mixtures have been studied and the authors slow that it is possible to dry etch such devices without creating ion-induced surface damage. A feature of ECR etching is the highly anisotropic nature of the pattern transfer. The role of the masking material in the subsequent morphology of the sidewall is also discussed.This publication has 27 references indexed in Scilit:
- Electron cyclotron resonance plasma-induced damage in AlGaAs/GaAs/AlGaAs single quantum wellsApplied Physics Letters, 1991
- Reactive ion etching of InP using CH4/H2 mixtures: Mechanisms of etching and anisotropyJournal of Vacuum Science & Technology B, 1989
- Investigation of reactive ion etching induced damage in GaAs–AlGaAs quantum well structuresJournal of Vacuum Science & Technology B, 1988
- Selective reactive ion etching of GaAs on AlGaAs using CCl2F2 and HeJournal of Vacuum Science & Technology B, 1988
- Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devicesApplied Physics Letters, 1987
- An analytical study of etch and etch-stop reactions for GaAs on AlGaAs in CCl2F2 plasmaJournal of Applied Physics, 1987
- Hydrogen in III–V SemiconductorsMRS Proceedings, 1987
- Rare gas ion-enhanced etching of InP by Cl2Journal of Vacuum Science & Technology B, 1986
- Surface Damage on GaAs Induced by Reactive Ion Etching and Sputter EtchingJournal of the Electrochemical Society, 1986
- Basic chemistry and mechanisms of plasma etchingJournal of Vacuum Science & Technology B, 1983