Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor

Preprint

30 August 2001

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0108510

Abstract

A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.

Keywords

MAGNETORESISTANCE EFFECT
LARGE MAGNETORESISTANCE
NOVEL MAGNETORESISTANCE
MAGNETIC SEMICONDUCTOR
SPIN POLARIZED
SEMICONDUCTOR
EFFECT DUE
INJECTION

All Related Versions

Version 1, 2001-08-30, ArXiv
Published version: Physical Review Letters, 87 (22), 227203.

This publication has 0 references indexed in Scilit: