Spectroellipsometry characterization of optical quality vapor-deposited diamond thin films
- 25 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (8) , 819-821
- https://doi.org/10.1063/1.104499
Abstract
Quantitative characterizational methods are required to optimize vapor-deposited diamond thin films for optical applications. In this work, spectroellipsometry has been applied to deduce two important characteristics of diamond films: the volume fraction of sp2-bonded defects in the bulk and the thickness of the roughness layer on the surface. We have determined these characteristics versus substrate temperature and CH4:H2 flow ratio for optical quality films prepared to 1000–4000 Å by microwave plasma-assisted chemical vapor deposition. Under optimum conditions, uniform films with ∼100 Å roughness and 3 vol.% bulk sp2C are obtained.Keywords
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